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Superconducting integrated circuits are a leading platform for building quantum processors and sensors that outperform their classical counterparts. Further advances in these emerging technologies require improvements in our understanding and control of how superconducting circuits interact with vibrations in solids called phonons.
The PhononNext Center at Berkeley Lab brings together experts in atom-to-devices modeling, synthesis and nanofabrication, superconducting detectors, and quantum devices. Our team will combine their expertise to develop multilayers for ultrahigh frequency phononics, and use these multilayers to realize next-generation phonon-engineered quantum sensors, transducers, and qubits.
Research Thrusts:
Research Thrusts:
Image of an EUV multilayer reflective coating. Credit: Center for X-Ray Optics (CXRO).
Wafer-scale multilayers for ultrahigh frequency phononics
Wafer-scale multilayers for ultrahigh frequency phononics
Our team will develop heterostructures to control the flow of ultrahigh frequency phonons (5-300 GHz) that impact superconducting circuit performance. These structures will enable next-generation phonon-engineered superconducting quantum sensors, transducers, and processors.
A phonon-engineered superconducting qubit. Credit: Quantum Devices Group
Phonon-engineered quantum transducers and processors
Phonon-engineered quantum transducers and processors
We will use phononic multilayers and metamaterials to :
control interactions of superconducting qubits with resonant phonons at GHz frequencies
develop low-noise electro-opto-mechanical quantum transducers.
Superconducting resonator on suspended silicon nitride membrane for phonon mitigation. Credit: Suzuki Group
Phonon-engineered quantum sensors
Phonon-engineered quantum sensors
We will use phononic multilayers to improve the performance of superconducting quantum sensors based on kinetic inductance and transition edge detectors. These multilayers will improve the detection efficiency of pair-breaking phonons by controlling reflective and absorptive surfaces at wafer scale.
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